Flip chip high power monolithic integrated circuit thermal bumps

摘要

A high power, flip-chip microwave monolithic integrated circuit (MMIC) assembly (30) has a high power microwave monolithic integrated circuit (MMIC) having a surface with an active area (72) in which heat is generated. The assembly also has a host substrate (34). A thermally conductive bump (51) formed over the surface of the MMIC has a first portion (51') in close proximity to and in thermal communication with the active area (72) of the MMIC and a second portion (51'') which is in close proximity to and in thermal communication with the host substrate (34). The second portion (51'') of the thermal bump (51) has a greater cross-sectional area than the first portion (51'). A multi-layer, multi-exposure method of manufacturing the improved thermal bump (51) includes several steps. A plating membrane (80) is formed on a surface of the MMIC (32). A first layer of negative photoresist is applied to the surface of the plating membrane (80), and is exposed with a first masked pattern of light. A second layer of negative photoresist is applied on top of the first layer of photoresist. The second layer of negative photoresist is exposed with a second masked pattern of light. Unexposed areas of the first and second layers of photoresist form a "T" shape. The first and second layers of photoresist are developed with a photoresist developer, thereby leaving a "T"-shaped via in the photoresist. An electrically and thermally conductive metal is plated onto the plating membrane and into the via to form a substantially "T"-shaped bump (51), which is then attached to a host substrate. The resulting bump has greater cross-sectional area at the host substrate than at the MMIC (32).