| 摘要 |
<p>A method of processing semiconductor materials, including providing a monocrystalline silicon substrate (12) having a (001) crystallographic surface orientation; off-cutting the substrate to an orientation from about 2° to about 6° offset towards the (110) direction; and epitaxially growing a relaxed graded layer of a crystalline GeSi (14) on the substrate (12) and the structure obtained by the method.</p> |
