| 发明名称 |
METHOD AND APPARATUS FOR ETCHING A SEMICONDUCTOR WAFER |
| 摘要 |
A method and apparatus (6) provides for etching a semiconductor wafer (40) using a two step physical etching and chemical etching process in order to create vertical sidewalls (20) required for high density DRAMs and FRAMs.
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| 申请公布号 |
CA2259972(A1) |
申请公布日期 |
1998.01.08 |
| 申请号 |
CA19972259972 |
申请日期 |
1997.01.23 |
| 申请人 |
TEGAL CORPORATION |
发明人 |
DEORNELLAS, STEPHEN P.;COFER, ALFERD;RAJORA, PARITOSH |
| 分类号 |
C23F4/00;H01J37/32;H01L21/02;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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