Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers,申请号DE19961000307-传众专利搜索

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发明名称	Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers
摘要
申请公布号	DE19600307(C1)	申请公布日期	1998.01.08
申请号	DE19961000307	申请日期	1996.01.05
申请人	SIEMENS AG, 80333 MUENCHEN, DE	发明人	KERBER, MARTIN, DR.RER.NAT., 81827 MUENCHEN, DE
分类号	H01L27/115;G11C16/02;H01L21/8247;H01L29/00;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/824	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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