In a method of forming alignment marks in a silicon layer using a masking layer, the etchant consists of a mixture of monoethanolamine-dimethyl-sulphoxide and water, preferably 10-75 (especially 50) vol.% of a mixture of 60-80 (especially 70) vol.% monoethanolamine and 20-40 (especially 30) vol.% dimethyl-sulphoxide in water.
申请公布号
DE19624316(A1)
申请公布日期
1998.01.08
申请号
DE1996124316
申请日期
1996.06.18
申请人
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE
