发明名称 METHODS FOR IMPROVING SEMICONDUCTOR PROCESSING
摘要 Novel processes for improving uniformity, reliability and throughput of processes used in semiconductor manufacturing. In one process of the present invention used to reduce moisture contamination, a substrate is placed in a chamber (202). The chamber is then evacuated (204). Next, the chamber is refilled with dry, heated gas to desorb any moisture attached to the surface of the substrate (206). The chamber is then evacuated to remove the heated gas and any moisture desorbed from the surface of the substrate (208). The process can be repeated to ensure complete removal of all moisture present in the chamber and on the substrate (210). In another process, used to precisely control gas temperature, gases used in semiconductor process are heated to reaction temperature prior to injection into a reaction vessel.
申请公布号 EP0741909(A4) 申请公布日期 1998.01.07
申请号 EP19950907316 申请日期 1995.01.12
申请人 INSYNC SYSTEMS, INC. 发明人 BALMA, FRANK, R.;ELLIOT, BRENT, D.
分类号 C23C14/24;C23C16/02;C23C16/44;C23C16/54;C23F4/00;H01L21/205;H01L21/302;H01L21/304;H01L21/306;H01L21/3065 主分类号 C23C14/24
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