| 摘要 |
<p>A semiconductor device comprising single crystal films (12,14,15) consisting of at least one III-V nitride selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and single-crystalline alloys of these nitrides, the single crystal films (12,14,15) being provided on a single crystal substrate of aluminum nitride (11) either directly or through a low-temperature growth buffer layer (13) of at least one III-V nitride. This semiconductor device is useful as a short-wavelength light emitting device capable of conducting continuous oscillation or a diode which is operated at a high temperature. The A1N single crystal substrate (11) is matched in lattice constant and coefficient of thermal expansion with the single crystal film (12,14,15) of a III-V nitride and the single crystal films is grown with good crystallinity on the substrate. <IMAGE></p> |
