Method of forming a doped silicon oxide film

摘要

A process is provided for the low temperature deposition of a thin film of borophosphosilicate glass (BPSG) for use in semiconductor devices, such as DRAMs. The process includes utilizing R-OH groups as reagents to provide additional -OH groups so that an intermediate äSi(OH)4ün is formed having superior reflow properties, allowing the annealing and reflow steps to occur at temperatures less than 750 DEG C, which is the current processing temperature.