发明名称 Soi-transistor circuitry employing soi-transistors and method of manufacture thereof
摘要 The invention includes several aspects related to semiconductor-on-insulator transistors, to memory and other DRAM circuitry and arrays, to transistor gate arrays, and to methods of fabricating such constructions. In one aspect, a semiconductor-on-insulator transistor includes, a) an insulator layer; b) a layer of semiconductor material over the insulator layer; c) a transistor gate provided within the semiconductor material layer; and d) an outer elevation source/drain diffusion region and an inner elevation diffusion region provided within the semiconductor material layer in operable proximity to the transistor gate. In another aspect, DRAM circuitry includes a plurality of memory cells not requiring sequential access, at least a portion of the plurality having more than two memory cells for a single bit line contact. In still another aspect, a DRAM array of memory cells comprises a plurality of wordlines, source regions, drain regions, bit lines in electrical connection with the drain regions, and storage capacitors in electrical connection with the source regions; at least two drain regions of different memory cells being interconnected with one another beneath one of the wordlines. In yet another aspect, a DRAM array has more than two memory cells for a single bit line contact, and a plurality of individual memory cells occupy a surface area of less than or equal to 2fx(2f+f/N), where "f" is the minimum photolithographic feature size with which the array was fabricated, and "N" is the number of memory cells per single bit line contact within the portion.
申请公布号 AU3492997(A) 申请公布日期 1998.01.07
申请号 AU19970034929 申请日期 1997.06.18
申请人 MICRON TECHNOLOGY, INC. 发明人 KIRK D PRALL
分类号 H01L21/8242;H01L21/336;H01L21/84;H01L27/108;H01L27/12;H01L29/786 主分类号 H01L21/8242
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