发明名称 Method of processing a thin film on a substrate for display.
摘要 In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes containing a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment. <IMAGE>
申请公布号 EP0681316(A3) 申请公布日期 1998.01.07
申请号 EP19950106505 申请日期 1995.04.28
申请人 SONY CORPORATION 发明人 INO, MASUMITSU;HAYASHI, HISAO;KUNII, MASAFUMI;URAZONO, TAKENOBU;NISHIHARA, SHIZUO;MINEGISHI, MASAHIRO
分类号 G02F1/136;G02F1/1362;G02F1/1368;H01L21/02;H01L21/20;H01L21/265;H01L21/268;H01L21/336;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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