Method of fabricating a surface emitting laser

摘要

The current injection layer lies on the active layer (CA) and comprises a p-doped indium phosphide layer (3), an under-etched layer (a) which is transparent at the operating wavelength, a second p-doped indium phosphide layer and a contact layer of indium-gallium-arsenic with or without phosphorus. A mesa shape is formed, centred on the placement for the upper mirror (MS) with vertical sides at 45 degrees to the cleavage planes of the substrate and leaving the sides of the under-etched layer exposed. This is etched under controlled conditions to form a film (a2) and its etched surround (a2) to constitute the confinement current layer.