| 摘要 |
A method is proposed for producing an insulation layer on a silicon wafer on which an epitaxial layer is applied according to the silicon-on-insulator arrangement comprises first developing a surface of the silicon wafer 1 with a porous structure in order to form the insulation layer. This porous structure is thermally partially oxidized and the excess oxide is subsequently stripped from the surface so that a homogeneous surface with densely arranged silicon needles results. A preferably monocrystalline silicon epitaxial layer 5 is grown on this oxidized surface comprising silicon dioxide 3 and silicon seeds, the silicon needles acting as seed cells. These silicon seeds preferably retain the mono-crystalline crystal structure of the silicon wafer. In a subsequent thermal process, the silicon oxide layer having the silicon needles is converted into a pure silicon oxide layer, so that a homogeneous oxide results. <IMAGE> |
