| 摘要 |
PCT No. PCT/GB97/01558 Sec. 371 Date Feb. 25, 1999 Sec. 102(e) Date Feb. 25, 1999 PCT Filed Jun. 10, 1997 PCT Pub. No. WO97/48128 PCT Pub. Date Dec. 18, 1997The invention provides a method of making an ohmic contact to a n-type diamond or an injecting contact to a p-type diamond. The method includes the steps of implanting a surface of the diamond with a n-type dopant atom at a dose just below the amorphisation threshold of the diamond to create an implanted region below the surface and extending from the surface, annealing the implanted region to allow tunnelling of electrons into the diamond in the case of a n-type diamond and allow electrons to be injected into the diamond in the case of a p-type diamond, and metallising at least a portion of the surface through which implantation occurred. |
