| 摘要 |
PROBLEM TO BE SOLVED: To allow reduction in cost while the photoelectric conversion efficiency of a thin film polycrystalline Si solar battery is being maintained by a method wherein a conductive layer having Sb as the main component, an Sb diffusion polycrystalline Si layer, a polycrystalline Si semiconductor layer having a homoepitaxial NP junction or an NIP junction, and an electrode are successively formed on a heat resisting substrate. SOLUTION: A conductive layer 2, which is mainly composed of Sb, is uniformly formed on the whole surface of a heat-resisting substrate 1, and then an amorphous or microscopic crystal Si layer 3 is formed thereon using a plasma CVD method, etc. Then, an insulating film 4, which works as a cap layer when heat treatment is conducted, is provided using SiO2 , a solid-phase growing operation is conducted until the particle size of the crystal particles in the Si layer 3 becomes the optimum particle size of several ten μm to several tens mm, and the Si layer 3 is converted to an Sb-diffused polycrystalline layer 3. Then, the insulating film 4 is removed by etching, a polycrystalline Si semiconductor layer 5, having an NP or NIP junction, is homoepitaxially grown on a giant particle-formed polycrystalline Si layer 3', and an electrode 6 is provided. |
