| 摘要 |
<p>PROBLEM TO BE SOLVED: To attain an active matrix panel with a high definition, compactness, and a high reliability at a low cost by alternately arranging wiring for positive and negative power sources in parallel and forming silicon thin films in a pattern of islands so that they cross the power source wiring. SOLUTION: A unit cell of a drive circuit is formed from a wiring 184 for a positive power supply, a wiring 185 for a negative power supply, silicon thin films 186-191 of P-type TFT, and silicon thin films 192-195 of N-type TFT. Separation of each TFT element is achieved by etching the silicon thin films 186-195 in a pattern of islands irrespective of whether they are homopolaror or heteropolar. Consequently, for example, it becomes possible to make the length a between the silicon film island 192 for N-type TFT and the silicon film island 187 for P-type TFT approximately equal to the length b between the two silicon thin film islands 187, 188 for P-type TFT. The integration degree is increased in the direction of repeating such a unit cell by alternately arranging the islands 186-191 for P-type TFT and the islands 192-195 for N-type TFT.</p> |
