| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a highly reliable thin film transistor having an Al alloy electrode wiring and good characteristics. SOLUTION: On an insulative substrate 1 a base insulation film 2, semiconductor film 3, gate insulation film 4, gate 5, source region 6, drain region 7, layer insulation film 8, pixel electrodes 9 and contact holes 10 are formed. An Al-10% Si alloy 11 is deposited and wet etched with a phosphatic soln. to form a source 12 and drain 13 with Si etching residues 14 left on the layer insulation film 8. It is plasma-etched to remove the residues 14, using a plasma CVD apparatus for depositing a passivation film 15. This etching is followed by the plasma CVD to form the film 15 in the same chamber, thereby obtaining a thin film transistor.</p> |
