ELECTRODE STRUCTURE FOR III-V COMPOUND SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to an electrode structure formed on a III-V compound semiconductor element and a method for manufacturing the same and an object thereof is to provide an electrode which exhibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, and is easy to shape itself. The electrode structure of the present invention is formed by annealing after the formation of a laminated structure having an ohmic layer including at least Ni formed on the III-V compound semiconductor element, a bonding layer to be connected with a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer and an isolation layer provided between the stopper layer and the ohmic layer.