| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-strength bonding wire suitable as a bonding wire for multipin semiconductor device, by a method wherein a specified amount of one kind of the element or more from the elements Co and Ni and a specified amount of Ge are made to contain in high-purity gold of a specified value or higher. SOLUTION: 0.05 to 2wt.% of one kind or more of the elements Co and Ni in the total amount and 0.05 to 1.2wt.% of Ge are made to contain in high- purity gold of 99.99wt.% or higher. The reason why the one kind or more of the elements Co and the Ni and the Ge are added complexly to the Au is to make possible the strength of a bonding wire enhance without reducing excessively the conductivity of the bonding wire by making a compound of the Co or the Ni with the Ge deposite finely in the Au. In the case where the addition amount of the Co or the Ni or the Ge is less than 0.05wt.%, the amount of a deposited substance is too little and the effect of the enhancement of the strength is insufficient. In contrast with this, when the adding amount of the Co or the Ni exceeds 2wt.%, a reduction in the conductivity is caused and, when the adding amount of the Ge exceeds 1.2wt.%, an eutectic crystal of the Ge with the Au is generated to reduce the processability of the wire. |
