Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method

摘要

According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn1-xCdxSe (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.