发明名称 METHOD OF MANUFACTURING MULTILAYER SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing multilayer substrate capable of reducing the wiring resistance value. SOLUTION: A hybrid IC is formed into a multilayer substrate 2 by laminating five aluminas of insulating layers 1a, 1b, 1c, 1d, 1e. In such a constitution, an inner layer wiring through trench 3a is formed by press-machining process in the insulating layer 1b of the multilayer substrate 2 so that this trench 3a may be filled up with an inner layer wiring material 4 by forcible inserting process or printing process. Likewise, another inner layer wiring through trench 3b is formed in the insulating layer 1c of the multilayer substrate 2 by the press-machining process so that this inner layer wiring through trench 3b may be filled up with the inner layer wiring material 4 by the forcible inserting process or the printing process.
申请公布号 JPH104265(A) 申请公布日期 1998.01.06
申请号 JP19970075243 申请日期 1997.03.27
申请人 DENSO CORP 发明人 NAGASAKA TAKASHI
分类号 H05K3/46;H01L23/12;(IPC1-7):H05K3/46 主分类号 H05K3/46
代理机构 代理人
主权项
地址