发明名称 |
Semiconductor substrate dry cleaning method |
摘要 |
A method for cleaning a semiconductor substrate. Introduced into a semiconductor substrate processing chamber is a semiconductor substrate. The semiconductor substrate and the semiconductor substrate processing chamber are maintained at a temperature not exceeding about 800 degrees centigrade. Introduced substantially simultaneously with the semiconductor substrate into the semiconductor substrate processing chamber is a low flow of a first oxidant gas. Introduced into the semiconductor substrate processing chamber immediately subsequent to the low flow of the first oxidant gas is a high flow of a second oxidant gas. Introduced into the semiconductor wafer processing chamber no earlier than the high flow of the second oxidant gas is a flow of a chlorine containing getter material. The semiconductor substrate is exposed to the high flow of the second oxidant gas and the flow of the chlorine containing getter material at a temperature not exceeding 800 degrees centigrade for a time period sufficient to remove organic contaminant residues and metal ion contaminant residues from the surface of the semiconductor substrate.
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申请公布号 |
US5704986(A) |
申请公布日期 |
1998.01.06 |
申请号 |
US19950529635 |
申请日期 |
1995.09.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD |
发明人 |
CHEN, CHIEN-FONG;CHENG, CHIA-CHUN;CHANG, CHI-FU;CHUANG, KUO-SHENG |
分类号 |
B08B7/00;C23C16/02;G03F7/42;H01L21/02;H01L21/28;H01L21/306;H01L21/311;H01L21/316;(IPC1-7):B08B5/00 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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