| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacture thereof in which a barrier layer repels a solder crawling up on a lateral surface so as to enable prevention of the solder from reaching a surface electrode, on welding the back surface of a pellet to a metal base by a solder. SOLUTION: In forming a pellet, a WSi-Ti layer 6, which is made by stacking solder-repellent metals Ti, TiN having poor wettability with respect to an AuSn solder and metals WSi, W having high barrier property against a general solder and preventing chemical reaction with the lapse of time, is formed as a barrier layer in portions corresponding to the bottom surfaces of Au plating layers 4a, 4b which are to be surface electrodes on the surface of an Au plating layer 4c on the lateral surface of a semiconductor substrate 1. Also, a WSi-TiN layer of a stacked metal layer may be formed as a barrier layer between the bottom surfaces of the Au plating layers 4a, 4b to be the surface electrodes and the Au plating layer 4c on the lateral surface of the pellet.</p> |
