| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device in which a gate oxide film is prevented from being damaged in such a manner that a conductive layer constructing wiring is selectively removed while leaving a predetermined thickness of the undermost part, an insulating layer is formed on the side of the exposed conductive layer, and the undermost conductive layer which is left is removed by anisotropic etching, thereby forming wiring. SOLUTION: A contact hole is filled with tungsten 8, and an aluminium film 9, a titanium nitride film 10, and an oxide silicon film 11 are sequentially formed. By using the patterned oxide silicon film 11 as a mask, the titanium nitride film 10 and the aluminium film 9 are patterned by anisotropic etching. The aluminium film 9 is left by about 100nm on a BPSG film 5. Subsequently, an oxide silicon film is formed and etch back is performed to the oxide film, thereby covering the side walls of the wiring with an oxide silicon film 13. An exposed part of the aluminium film 9 is subjected to anisotropic etching and each wiring is separated. |
