发明名称 |
Temperature controlling method and apparatus for a plasma processing chamber |
摘要 |
A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers. |
申请公布号 |
AU3079597(A) |
申请公布日期 |
1998.01.05 |
申请号 |
AU19970030795 |
申请日期 |
1997.06.02 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
THOMAS E. WICKER;JOEL M. COOK;ROBERT A. MARASCHIN;WILLIAM S. KENNEDY;NEIL BENJAMIN |
分类号 |
C23C16/44;C23C16/455;C23C16/50;C23C16/505;C23C16/507;H01J37/32;H01L21/205;H01L21/302 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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