发明名称 |
Selective crystal growth method of compound semiconductor |
摘要 |
Disclosed herein is a selective metalorganic vapor phase growth method of a group III-V compound semiconductor containing at least Al and In, in which a ratio of an HCl gas supply amount to a supply amount of a group III metalorganic material ([HCl supply amount]/[group III supply amount]) is set in a range of 0.01-0.3. Hence, a polycrystal density is decreased to ensure a selectivity, and a grown crystal composition can be controlled so as not to be excessive in the Al composition so that composition control can be done easily.
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申请公布号 |
US5704975(A) |
申请公布日期 |
1998.01.06 |
申请号 |
US19950415988 |
申请日期 |
1995.04.04 |
申请人 |
NEC CORPORATION |
发明人 |
KOBAYASHI, RYUJI;HOTTA, HITOSHI |
分类号 |
C30B25/14;C23C16/18;H01L21/20;H01L21/205;(IPC1-7):C30B25/02 |
主分类号 |
C30B25/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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