发明名称 X-RAY MASK AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To enable a transmission fine pattern and the other pattern to be properly and concurrently transferred by a method wherein an X-ray absorbing layer prescribed in thickness is provided to a part or all of a transmission pattern below prescribed dimensions. SOLUTION: An X-ray absorbent pattern 1 of thickness t is formed on an X-ray transmitting thin film 6 for the formation of an X-ray mask, wherein the transmission patterns 5a and 5b out of transmission patterns of the X-ray mask are above prescribed dimensions and so set to have a height difference 1 of t with light shielding patterns 7e, 7f, and 7g. On the other hand, X-ray absorbent layers 4a, 4b, 4c, and 4d of thickness t2 are provided in the fine transmission patterns 2a, 2b, 2c, and 2d out of the X-ray mask, which are smaller than prescribed dimensions, so as to enable the fine patterns 2a, 2b, 2c, and 2d to have a height difference 3 of t1 with the light shielding patterns 7a, 7b, 7c, 7d, and 7e. Therefore, an X-ray intensity distribution on which the height difference 3 of t1 and the layers 4a, 4b, 4c, and 4d are combined to have an effect is formed.
申请公布号 JPH104052(A) 申请公布日期 1998.01.06
申请号 JP19960156727 申请日期 1996.06.18
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 HORIUCHI TOSHIYUKI;DEGUCHI KIMIKICHI
分类号 G21K5/02;G03F1/22;H01L21/027 主分类号 G21K5/02
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