SEMICONDUCTOR LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting diode having semiinsulating current constricting layer made of III-V nitride. SOLUTION: A III-V nitride 105 is grown using an SiNx film as a selective growing mask while doping the nitride 105 so as to contain carbon atoms in the concentration exceeding 10<17> /cm<3> . The formed nitride layer 105 becoming a semiinsulating layer can be used as a clad layer of a current constricting layer and a light guide path. In such a constitution, the semi-insulating layer of a specific shape can be grown thereby enabling a high performance light emitting diode to be formed. Furthermore, the III-V nitride layer is to be grown by gas MBE process using a compound having alkyl radical for either a group III material or a group V material.