| 摘要 |
PROBLEM TO BE SOLVED: To enable a through-hole on a gate electrode to be formed concurrently with a self-aligned contact(SAC) without complicating a manufacturing process, by a method wherein an etching stopper film which covers the side wall and upside of a gate electrode excluding a prescribed region of the upside is provided. SOLUTION: An element isolating film 12 is formed on a silicon substrate 10 so as to demarcate an element region, a gate electrode 26 is formed on the element region through a gate oxide film 18, and source/drain diffusion layers 28 are formed on both the sides of the gate electrode 26, respectively. An etching stopper film 36 is formed so as to cover the side wall and upside of the gate electrode 26 excluding a prescribed region of the upside. By this setup, through-holes 42, 44, 46, and 48 of SAC structure can be formed, and the through-holes 42 to 48 are bored on the gate electrode 26 without removing the etching stopper film 36. |
