Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
摘要
Digital optical telecommunication uses optical semiconductor components having a transition region for the expansion of the mode field of a light wave in order to reduce losses when coupling to an optical fibre or an optical waveguide of a supporting plate. An optical semiconductor component (BE1; BE2) contains a deep ridged waveguide (RIDGE) with a surfacing (DS) disposed on a substrate (SUB). The ridged waveguide (RIDGE) has a first (MQW) and a second (BULK) waveguide centre. The first waveguide centre (MQW) contains one or more optically active semiconductor layers. In a first transition region (UB1) the layer thickness of the second waveguide centre (BULK) decreases along a longitudinal direction (L) of the ridged waveguide (RIDGE). As a result, a light wave guided in the optical semiconductor component (BE1; BE2) is diverted into the surfacing (DS) and substrate (SUB) semiconductor material surrounding the waveguide centre, whereby its mode field is expanded.
申请公布号
DE19626113(A1)
申请公布日期
1998.01.02
申请号
DE19961026113
申请日期
1996.06.28
申请人
ALCATEL SEL AG, 70435 STUTTGART, DE
发明人
DUETTING, KASPAR, 70180 STUTTGART, DE;KUEHN, EDGAR, DR., 70563 STUTTGART, DE