发明名称 ZWEILAGENPHOTORESISTSTRUKTUR UND VERFAHREN ZU IHRER HERSTELLUNG
摘要 This invention relates to a double-layer resist characterized by comprising a thin film whose principal constituent is a conjugated system polymer and resist, wherein a thin film excellent in shading capability, anti-reflection property, and uniformity is provided and, thus, a radiation-sensitive double-layer resist to create fine resist patterns stable in workability can be provided. <IMAGE>
申请公布号 DE69223233(D1) 申请公布日期 1998.01.02
申请号 DE1992623233 申请日期 1992.08.12
申请人 TORAY INDUSTRIES, INC., TOKIO/TOKYO, JP 发明人 TSUKAMOTO, JUN, OTSU-SHI SHIGA 520, JP;ICHIJO, CHIKARA, OTSU-SHI SHIGA 520, JP;IMAZU, EMI, OTSU-SHI SHIGA 520-21, JP
分类号 G03F7/004;G03F7/025;G03F7/09;G03F7/11;G03F7/26;H01L21/027 主分类号 G03F7/004
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