<p>In a semiconductor laser provided with an active layer and a buried layer which absorbs the laser light emitted from the active layer, the oscillation wavelength of the laser light is in a 650-nm band and the oscillation mode is in a single transverse mode. In addition, the peak of the intensity distribution of the laser light is positioned oppsite to the buried layer with respect to the center of the active layer.</p>
申请公布号
WO9750158(A1)
申请公布日期
1997.12.31
申请号
WO1997JP02171
申请日期
1997.06.24
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;FUKUHISA, TOSHIYA;MANNOH, MASAYA;KIDOGUCHI, ISAO;TAKAMORI, AKIRA;ADACHI, HIDETO