发明名称 Phasenmodulierende Mikrostrukturen für höchstintegrierte Flächenlichtmodulatoren
摘要 The invention relates to a structure for phase modulation of light (32) falling on said structure which has a mirror (40), a deformable and transparent dielectric (36) arranged on said mirror, at least two electrodes (41, 42; 41a, 41b, 42; 50, 50') which are at one or a plurality of fixed voltages, and can be acted upon by one or a plurality of control voltages, to generate an electric field (58) in at least one partial region of the dielectric (36). Consequently, the optical path length of the light traversing the dielectric (36) is changed in relation to a state of the dielectric (36) which is not acted upon by the electric field. An arrangement of a plurality of said phase modulating structures which is applied to a CMOS-active matrix, forms a highly-integrated surface light modulator.
申请公布号 DE19624276(A1) 申请公布日期 1998.01.02
申请号 DE19961024276 申请日期 1996.06.18
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE 发明人 GOTTFRIED-GOTTFRIED, RALF, 01109 DRESDEN, DE;KUECK, HEINZ, DR., 01465 LANGEBRUECK, DE;KUNZE, DETLEF, DR., 01097 DRESDEN, DE
分类号 G02B26/06;G09F9/00;(IPC1-7):G02B26/06;G02F1/01 主分类号 G02B26/06
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