Double-poly monos flash EEPROM cell

摘要

The present invention discloses a double poly metal oxide+544 nitride+544 oxide semiconductor electrically erasable programmable read only memory (EEPROM) for use in semiconductor memories. The EEPROM structure includes a select gate, an oxide+544 nitride+544 oxide layer, and a control gate. The control gate is formed on the oxide+544 nitride+544 oxide layer. A lightly doped drain (LDD) structure is formed adjacent to the drain and underneath the control gate.