| 摘要 |
A semiconductor device, by which a base in which gates are buried can be formed by the junction of semiconductor substrates to each other at a lower temperature, and a fabrication process thereof are provided. Recesses are defined in the top of an N- substrate. A P+ layer is formed on the underside of the N- substrate. P+-Gate regions are each formed in an area ranging from the bottom to lower side portions of the recesses. A metal layer composed of an Au-Sb alloy is formed on the underside of the N+ substrate. The N- substrate and the N+ substrate are subjected to a treatment for removing impurities thereon with an aqueous solution of sulfuric acid and hydrogen peroxide, washed with purified water and dried by a spin dryer. The N- substrate and the N+ substrate are heated at about 350 DEG C. in a hydrogen atmosphere in a state that the tops of the projections between the recesses have been brought into contact with the metal layer provided on the underside of the N+ substrate, whereby the N- substrate and the N+ substrate are joined to each other.
|
