发明名称 |
MOCVD reactor system for indium antimonide epitaxial material |
摘要 |
Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures using heated manifolds or heated susceptor, and rotation of individual wafers in a multi-wafer reactor chamber enhance thickness uniformity, surface morphology and electronic properties of deposited epitaxial layers.
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申请公布号 |
US5702532(A) |
申请公布日期 |
1997.12.30 |
申请号 |
US19960606660 |
申请日期 |
1996.02.26 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
WEN, CHENG P.;ROLPH, RANDY K.;ZIELINSKI, TIMOTHY T. |
分类号 |
C23C16/30;C30B25/02;C30B25/14;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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