发明名称 Porosity-free electrical contact material, pressure cast method and apparatus
摘要 A 100% dense, porosity free copper-chromium contact has been prepared in which deleterious porosity has been eliminated. This copper-chromium contact has been produced by pressurizing liquid copper to infiltrate an evacuated chromium based, lightly sintered, highly porous preform. The electrical contact has one of either a homogeneous Cr distribution and a graded Cr distribution. The apparatus used to effect the molten metal infiltration has two independent, physically separated chambers-a first cold chamber and a second hot chamber. The first chamber is under no applied pressure except inside a gating system used to transfer molten Cu into the porous preform in the first chamber. The new contact has about 15-30% Cr material and a high erosion resistant contact surface. The graded Cr distribution has a Cr rich layer with about 25-50% by weight Cr, an intermediate Cr layer with about 15-20% by weight Cr, a low Cr layer with about 5-15% Cr and a Cr poor layer with about 1-5% Cr above a copper substrate.
申请公布号 US5701993(A) 申请公布日期 1997.12.30
申请号 US19940257990 申请日期 1994.06.10
申请人 EATON CORPORATION 发明人 WHITLOW, GRAHAM A.;GUNGOR, MEHMET N.;LOVIC, WILLIAM R.
分类号 C22C1/04;H01H1/02;(IPC1-7):H01H1/02 主分类号 C22C1/04
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