发明名称 |
Porosity-free electrical contact material, pressure cast method and apparatus |
摘要 |
A 100% dense, porosity free copper-chromium contact has been prepared in which deleterious porosity has been eliminated. This copper-chromium contact has been produced by pressurizing liquid copper to infiltrate an evacuated chromium based, lightly sintered, highly porous preform. The electrical contact has one of either a homogeneous Cr distribution and a graded Cr distribution. The apparatus used to effect the molten metal infiltration has two independent, physically separated chambers-a first cold chamber and a second hot chamber. The first chamber is under no applied pressure except inside a gating system used to transfer molten Cu into the porous preform in the first chamber. The new contact has about 15-30% Cr material and a high erosion resistant contact surface. The graded Cr distribution has a Cr rich layer with about 25-50% by weight Cr, an intermediate Cr layer with about 15-20% by weight Cr, a low Cr layer with about 5-15% Cr and a Cr poor layer with about 1-5% Cr above a copper substrate.
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申请公布号 |
US5701993(A) |
申请公布日期 |
1997.12.30 |
申请号 |
US19940257990 |
申请日期 |
1994.06.10 |
申请人 |
EATON CORPORATION |
发明人 |
WHITLOW, GRAHAM A.;GUNGOR, MEHMET N.;LOVIC, WILLIAM R. |
分类号 |
C22C1/04;H01H1/02;(IPC1-7):H01H1/02 |
主分类号 |
C22C1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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