发明名称 |
Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate and apparatus for making the same |
摘要 |
For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas. |
申请公布号 |
US5702529(A) |
申请公布日期 |
1997.12.30 |
申请号 |
US19950467127 |
申请日期 |
1995.06.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIKATA, YUUICHI;ISHIHARA, KATSUNORI;OKUMURA, KATSUYA |
分类号 |
C23C16/44;C23C16/452;C23C16/455;H01L21/205;H01L21/22;H01L21/223;H01L21/31;H01L21/3215;H01L21/768;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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