| 发明名称 |
Reduced chemical-mechanical polishing particulate contamination |
| 摘要 |
Particulate contamination of a semiconductor wafer subjected to chemical-mechanical polishing is reduced by applying a high pressure water spray to the polishing pad during conditioning.
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| 申请公布号 |
US5702563(A) |
申请公布日期 |
1997.12.30 |
| 申请号 |
US19950477699 |
申请日期 |
1995.06.07 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SALUGSUGAN, ISIDORE;SCHONAUER, DIANA M. |
| 分类号 |
H01L21/304;H01L21/3105;H01L21/321;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
| 代理机构 |
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