| 摘要 |
The invention described herein includes, in one of its forms, a method for fabricating a semiconductor device having ledge material (148, 150, 152, 162) extending over an undercut region. The method comprises the step of forming a layer of material 164 in tensile stress over the undercut region, or region to be undercut. The layer of material in tensile stress can be a dielectric, such as silicon nitride, and provides support for the ledge material in subsequent processing steps.
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