发明名称 |
Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same |
摘要 |
A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film 2, an aluminum monocrystalline film 3 and an aluminum oxide film 4 are formed on a mask substrate 1 so as to have a prescribed pattern feature. Silicon monocrystalline film 2 and aluminum monocrystalline film 3 serve as the light-shielding film. Aluminum oxide film 4 serves as an anti reflection and protection film.
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申请公布号 |
US5702849(A) |
申请公布日期 |
1997.12.30 |
申请号 |
US19960721076 |
申请日期 |
1996.09.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION |
发明人 |
SAKATA, HIROFUMI;NISHIOKA, TADASHI |
分类号 |
G01Q30/12;G03F1/08;G03F1/14;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G01Q30/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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