发明名称 |
Method of forming a via hole of a semiconductor device with spin-on-glass film sealed by an oxide film |
摘要 |
The present invention discloses a method of forming a via hole of a semiconductor device, which includes the steps of: forming a plurality of first metal wires on a wafer; after coating a SOG film on the first oxide film, forming a groove in the SOG film using a mask in which a via hole contact is formed, the size of which is bigger than that of the real via hole to be formed in it; performing a process of filling up completely the groove portion (a two-step process for the first embodiment or a one-step process for the second embodiment); and forming a via hole using a contact mask the size of which is the same as that of the real via hole.
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申请公布号 |
US5702568(A) |
申请公布日期 |
1997.12.30 |
申请号 |
US19960668845 |
申请日期 |
1996.06.24 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
SHIN, CHAN SOO;KIM, CHOON HWAN |
分类号 |
H01L21/768;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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