| 发明名称 |
Magneto-resistance effect element |
| 摘要 |
Disclosed is a magneto-resistance effect element indicating a larger magneto-resistance effect at room temperature under impression of low magnetic field is obtained with the construction wherein the characteristics of artificial metallic lattice membrane are exploited.
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| 申请公布号 |
US5702834(A) |
申请公布日期 |
1997.12.30 |
| 申请号 |
US19960652681 |
申请日期 |
1996.05.30 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKAKIMA, HIROSHI;SATOMI, MITSUO;TAKEUCHI, HIROSHI |
| 分类号 |
G11B5/39;G01R33/09;H01L43/08;(IPC1-7):G11B5/66 |
主分类号 |
G11B5/39 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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