发明名称 |
Improved semiconductor lasers and method for making the same |
摘要 |
<p>A semiconductor laser diode (30), comprising a waveguide being terminated by a back facet (34) and a front facet (33). These facets (33, 34) comprise a front facet coating (31B) and a back facet coating (21A) having a reflectivity providing for controlled decoupling of light at said front facet (33) from the standing lightwave in said waveguide. The front facet coating (31B) comprises a stack of layers providing for a phase shift of the standing lightwave within said waveguide such that the intensity of the lightwave at said front facet (33), where light it is decoupled from said standing lightwave, has a relative minimum. <IMAGE></p> |
申请公布号 |
EP0814544(A2) |
申请公布日期 |
1997.12.29 |
申请号 |
EP19970109746 |
申请日期 |
1997.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIETRICH, HANS PETER;LATTA, ERNST-EBERHARD;GASSER, MARCEL;ROENTGEN, PETER;JAKUBOWICZ, ABRAM |
分类号 |
H01S5/028;(IPC1-7):H01S3/025 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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