| 摘要 |
After vaporizing a polysilicon film(26) for source use on a semiconductor base material(21) or a well, ion-injects boron with the specified density on the polysilicon film. It is provided that source is formed by patterning polysilicon film by photo-etching process and gate oxide film is formed on the overall structure. Performs doping vaporization of polysilicon film(23) for gate use, on the gate oxide film(22), and using the gate mask, forms the gate by patterning. After low density ion injection, forms the spaces oxide film on the gate(23) side-wall. By injecting relatively higher density ion than the one used in the low density ion completes the drain(26).
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