Semiconductor device and method of manufacturing the same

摘要

An isolation (2) is formed in a part of a P-well (1) of a semiconductor substrate. A resistor film (4a) as a first conductor member is formed on the isolation (2). An insulating film (5b) covering the resistor film (4a) except for contact formation regions and an upper electrode film (6b) as a second conductor member are formed simultaneously with the formation of a gate electrode (6a) and a gate oxide film (5a). Silicide films (11a)-(11d) of a refractory metal are formed on the respective surfaces of the gate electrode (6a), N-type high-concentration diffusion layers (10), the contact formation regions of the resistor film (4a), and the upper electrode film (6b). By utilizing a salicide process, a resistor and an inductor each occupying a small area can be formed without lowering the resistance of the resistor film (4a). A capacitor, the resistor, and like component are selectively allowed to function.