| 摘要 |
A process for producing a thin film of a metal fluoride (glass or crystalline) comprising reacting a gaseous fluorinating agent (e.g. NF3) and gas of a volatile organometallic compound (e.g. of Barium) in a gas phase in a reactor, wherein a plasma of the gaseous fluorinating agent obtained by activating the gaseous fluorinating agent by microwave under a condition of electron cyclotron resonance is used as a fluorine source, and the metal fluoride is deposited on a substrate (e.g. Si, glass, ceramic) by reacting the plasma of the gaseous fluorinating agent with the gas of a volatile organometallic compound at outside of an area of generation of the plasma. A thin film of a metal fluoride which contains very little impurities such as carbon, oxygen, and organic substances, and is highly pure, transparent, and consolidated is produced. <IMAGE> |
