Trench capacitor DRAM cell and method of making the same
摘要
Method for forming three-dimensional device structures such as a trench capacitor DRAM cell comprising a second device (370) formed over a first device (315) is disclosed. A layer (350,355) having a single crystalline top surface (350) is formed above the first device (315) to provide the base for forming the active area of the second device. <IMAGE>
申请公布号
EP0814507(A1)
申请公布日期
1997.12.29
申请号
EP19970304339
申请日期
1997.06.20
申请人
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
HAMMERL, ERWIN;MANDELMAN, JACK A.;POSCHENRIEDER, BERNHARD;SHORT, ALVIN P.;SRINIVASAN, RADHIKA;STENGL, REINHARD J.;HO, HERBERT L.
