发明名称 |
Etching of nitride crystal |
摘要 |
A gas-phase etchant is provided. The gas-phase etchant includes at least one halogen in gaseous form and/or at least one halogen halide in gaseous form. A Group III-nitride crystal is heated to a temperature in the range of 500-900 DEG C and is etched in a flow of the gas-phase etchant. The gas-phase etchant may additionally include hydrogen. The gas-phase etchant may alternatively be diluted with inert gas, and the Group III-nitride crystal may be etched in a flow of the gas-phase etchant diluted with the inert gas. <IMAGE> |
申请公布号 |
EP0762486(A3) |
申请公布日期 |
1997.12.29 |
申请号 |
EP19960305466 |
申请日期 |
1996.07.25 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
KANEKO, YAWARA;YAMADA, NORIHIDE |
分类号 |
C23F4/00;H01L21/205;H01L21/302;H01L21/306;H01L21/3065;H01S5/00;H01S5/323 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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