Method and circuit for generating a read reference signal for nonvolatile memory cells

摘要

The current flowing through a cell (4) to be read, forming part of a nonvolatile memory array (5) and presenting a characteristic (ITC, ITW) with a predetermined slope, is amplified N times (ITCNB, ITWNB) and compared with a reference current (IR1) presenting a two portion characteristic: a first portion extending between a predetermined threshold value (VTR) and a trigger value (VS), and presenting a slope equal to that of the memory cell characteristic; and a second portion extending from the trigger value (VS), and presenting a slope amplified N times with respect to that of the cell characteristic and therefore equal to the amplified slope of the cell. <IMAGE> <IMAGE>