MULTI-LAYER CONNECTING METHOD OF SEMICONDUCTOR DEVICE

摘要

All over the substrate which includes the first metal wiring film vaporize the first oxide film(32) and all over the film, carry out etching back of SOG film(37). After performing etching back of SOG film(37) by means of the dry etch method, vaporizing the second oxide film(35), spreading the photo resist(34), and perform a baking under a certain temperature. Then, etching back the photo resist(34), the second oxide film(35) is partially etched to obtain a interlayer insulation film, after removing the remaining photo resist with an organic solvent in the process of etch back, the second metal wiring film is completed.